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H7N1005DL - Silicon N-Channel MOS FET

H7N1005DL Description

H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching .

H7N1005DL Features

* Low on-resistance RDS (on) = 85 mΩ typ.
* Low drive current
* Capable of 4.5 V gate drive Outline REJ03G1736-0100 Rev.1.00 Sep 19, 2008 RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 123 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) D

H7N1005DL Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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Silicon N-Channel MOS FET Renesas
Renesas H7N1005DL-like datasheet