Download Datasheet (113.02 KB)
H7N1005DL
113.02 KB
Silicon n-channel mos fet.
H7N1005DL, H7N1005DS
Silicon N Channel MOS FET High Speed Power Switching
Features
* Low on-resistan.
ce RDS (on) = 85 mΩ typ.
* Low drive current * Capable of 4.5 V gate drive
Outline
REJ03G1736-0100 .
📁 Related Datasheet
H7N1005DS, Renesas
H7N1005DL, H7N1005DS
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 85 mΩ typ.
• Low drive current • Cap.
H7N1005LD, Renesas Technology
H7N1005LD, H7N1005LS, H7N1005LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0391-0200 Rev.2.00 Oct 16, 2006
Features
• Low on-resistan.
H7N1005LM, Renesas Technology
.
H7N1005LS, Renesas Technology
.
H7N1002AB, Renesas Technology
H7N1002AB
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0130-0200Z Rev.2.00 Oct.30.2003
..
Features
• Low on-resistance.
