Part number:
H7N1002AB
Manufacturer:
Renesas ↗ Technology
File Size:
231.02 KB
Description:
Silicon n channel mos fet high speed power switching.
H7N1002AB_RenesasTechnology.pdf
Datasheet Details
H7N1002AB Features
* Low on-resistance RDS(on) = 8 mΩ typ.
* Low drive current
* Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N1002AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag
H7N1002AB_RenesasTechnology.pdf
Datasheet Details
H7N1002AB
Renesas ↗ Technology
231.02 KB
Silicon n channel mos fet high speed power switching.
📁 Related Datasheet
H7N1002LD Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H7N1002LM Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H7N1002LS Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H7N1004AB Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H7N1004DL Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H7N1004DS Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H7N1004FM Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H7N1004FN Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H7N1002AB Distributor