H7N1002AB Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

Description

H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.2.00 Oct.30.2003 www.DataSheet4U.com .

📥 Download Datasheet

H7N1002AB Datasheet Preview — Preview of H7N1002AB PDF

Datasheet Specifications

Part number: H7N1002AB
Manufacturer: Renesas ↗ Technology
File Size: 231.02 KB
Datasheet: H7N1002AB_RenesasTechnology.pdf
Description: Silicon N Channel MOS FET High Speed Power Switching

Features

* Low on-resistance RDS(on) = 8 mΩ typ.
* Low drive current
* Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N1002AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag

H7N1002AB Distributors

📁 Related Datasheet

H7N1005DL H7N1005DS H7N0203AB H7N0307AB H7N0307L H7N0307LD

📌 All Tags

H7N1002AB Silicon Channel MOS FET High Speed Power Switching Renesas Technology

Renesas Technology H7N1002AB-like datasheet