H7N1002AB Datasheet - Renesas Technology

H7N1002AB, Silicon N Channel MOS FET High Speed Power Switching

H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.2.00 Oct.30.2003 www.DataSheet4U.com .

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H7N1002AB_RenesasTechnology.pdf

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Datasheet Details

Part number:

H7N1002AB

Manufacturer:

Renesas ↗ Technology

File Size:

231.02 KB

Description:

Silicon N Channel MOS FET High Speed Power Switching

Features

* Low on-resistance RDS(on) = 8 mΩ typ.
* Low drive current
* Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N1002AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag

H7N1002AB Distributors

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H7N1002AB Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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