H7N1004AB Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

Description

H7N1004AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1579-0100 Rev.1.00 Sep 03, 2007 .

📥 Download Datasheet

H7N1004AB Datasheet Preview — Preview of H7N1004AB PDF

Datasheet Specifications

Part number: H7N1004AB
Manufacturer: Renesas ↗ Technology
File Size: 144.77 KB
Datasheet: H7N1004AB_RenesasTechnology.pdf
Description: Silicon N Channel MOS FET High Speed Power Switching

Features

* Low on-resistance RDS (on) =25 mΩ typ. www. DataSheet4U. com
* Low drive current
* Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB ) 4 D G 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 S Absolute Maximum Ratings (Ta = 25°C

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

H7N1004AB Distributors

📁 Related Datasheet

H7N1005DL H7N1005DS H7N0203AB H7N0307AB H7N0307L H7N0307LD

📌 All Tags

H7N1004AB Silicon Channel MOS FET High Speed Power Switching Renesas Technology

Renesas Technology H7N1004AB-like datasheet