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H7N1004AB - Silicon N Channel MOS FET High Speed Power Switching

H7N1004AB Description

H7N1004AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1579-0100 Rev.1.00 Sep 03, 2007 .

H7N1004AB Features

* Low on-resistance RDS (on) =25 mΩ typ. www. DataSheet4U. com
* Low drive current
* Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB ) 4 D G 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 S Absolute Maximum Ratings (Ta = 25°C

H7N1004AB Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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Silicon Channel MOS FET High Speed Power Switching Renesas Technology
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