H7N1004AB Datasheet - Renesas Technology

H7N1004AB, Silicon N Channel MOS FET High Speed Power Switching

H7N1004AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1579-0100 Rev.1.00 Sep 03, 2007 .

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Datasheet Details

Part number:

H7N1004AB

Manufacturer:

Renesas ↗ Technology

File Size:

144.77 KB

Description:

Silicon N Channel MOS FET High Speed Power Switching

Features

* Low on-resistance RDS (on) =25 mΩ typ. www. DataSheet4U. com
* Low drive current
* Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB ) 4 D G 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 S Absolute Maximum Ratings (Ta = 25°C

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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H7N1004AB Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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