H7N1004FM - Silicon N Channel MOS FET High Speed Power Switching
H7N1004FM Features
* Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline TO-220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Rev.1.00, Aug.27.2003, page 1 of 9 H7N1004FM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source volta
