H7N1004FM Datasheet - Renesas Technology

H7N1004FM, Silicon N Channel MOS FET High Speed Power Switching

H7N1004FM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0073-0100Z (Previous ADE-208-1463A(Z)) Rev.1.00 Aug.27.2003 www.DataSheet4U.com F.

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Datasheet Details

Part number:

H7N1004FM

Manufacturer:

Renesas ↗ Technology

File Size:

136.69 KB

Description:

Silicon N Channel MOS FET High Speed Power Switching

Features

* Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline TO-220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Rev.1.00, Aug.27.2003, page 1 of 9 H7N1004FM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source volta

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H7N1004FM Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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