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H7N0203AB - Silicon N-Channel MOSFET

H7N0203AB Description

H7N0203AB Silicon N Channel MOS FET High Speed Power Switching .

H7N0203AB Features

* Low on-resistance RDS (on) =2.4 mΩ typ.
* Low drive current
* 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 123 G S REJ03G1119-0500 (Previous: ADE-208-1490C) Rev.5.00 Sep 07, 2005 1. Gate 2. Dr

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Silicon N-Channel MOSFET Renesas
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