H7N1005DS Datasheet, Fet, Renesas

H7N1005DS Features

• Fet
• Low on-resistance RDS (on) = 85 mΩ typ.
• Low drive current
• Capable of 4.5 V gate drive Outline REJ03G1736-0100 Rev.1.00 Sep 19, 2008 RENESAS Package code:

PDF File Details

Part number:

H7N1005DS

Manufacturer:

Renesas ↗

File Size:

113.02kb

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📄 Datasheet

Description:

Silicon n-channel mos fet.

H7N1005DS Application

• Applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or tec

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