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H7N0307AB - Silicon N-Channel MOSFET

H7N0307AB Description

H7N0307AB Silicon N Channel MOS FET High Speed Power Switching .

H7N0307AB Features

* Low on-resistance RDS (on) = 4.6 mΩ typ.
* Low drive current
* 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G D S REJ03G1120-0300 (Previous: ADE-208-1568A) Rev.3.00 Sep 07, 2005 1. Gate 2.

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Silicon N-Channel MOSFET Renesas
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