H7N1005LD Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

Description

H7N1005LD, H7N1005LS, H7N1005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0391-0200 Rev.2.00 Oct 16, 2006 .

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Datasheet Specifications

Part number: H7N1005LD
Manufacturer: Renesas ↗ Technology
File Size: 161.26 KB
Datasheet: H7N1005LD_RenesasTechnology.pdf
Description: Silicon N Channel MOS FET High Speed Power Switching

Features

* Low on-resistance RDS (on) = 85 mΩ typ. www. DataSheet4U. com
* Low drive current
* Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 2 3 RENESAS Package code: PRSS0004AE-B (Package name

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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H7N1005LD Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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