H7N1005LD Datasheet - Renesas Technology

H7N1005LD, Silicon N Channel MOS FET High Speed Power Switching

H7N1005LD, H7N1005LS, H7N1005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0391-0200 Rev.2.00 Oct 16, 2006 .

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Datasheet Details

Part number:

H7N1005LD

Manufacturer:

Renesas ↗ Technology

File Size:

161.26 KB

Description:

Silicon N Channel MOS FET High Speed Power Switching

Features

* Low on-resistance RDS (on) = 85 mΩ typ. www. DataSheet4U. com
* Low drive current
* Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 2 3 RENESAS Package code: PRSS0004AE-B (Package name

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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H7N1005LD Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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