H7N1004FN Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

Description

H7N1004FN Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1593-0100 Rev.1.00 Oct 23, 2007 .

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Datasheet Specifications

Part number: H7N1004FN
Manufacturer: Renesas ↗ Technology
File Size: 147.96 KB
Datasheet: H7N1004FN_RenesasTechnology.pdf
Description: Silicon N Channel MOS FET High Speed Power Switching

Features

* Low on-resistance
* RDS(on) = 25 mΩ typ. www. DataSheet4U. com
* Low drive current
* Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C)

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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H7N1004FN Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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