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H7N1004DS, H7N1004DL - Silicon N Channel MOS FET High Speed Power Switching

H7N1004DS Description

H7N1004DL, H7N1004DS Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1482-0100 Rev.1.00 Nov 07, 2006 .

H7N1004DS Features

* Low on-resistance RDS(on) = 25 mΩ typ. www. DataSheet4U. com
* Low drive current
* Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-2) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK-(S)) D 1 2 3 G 1. Gate 2. Drain 3

H7N1004DS Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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This datasheet PDF includes multiple part numbers: H7N1004DS, H7N1004DL. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H7N1004DS, H7N1004DL
Manufacturer
Renesas ↗ Technology
File Size
152.25 KB
Datasheet
H7N1004DL_RenesasTechnology.pdf
Description
Silicon N Channel MOS FET High Speed Power Switching
Note
This datasheet PDF includes multiple part numbers: H7N1004DS, H7N1004DL.
Please refer to the document for exact specifications by model.

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Silicon Channel MOS FET High Speed Power Switching Renesas Technology
Renesas Technology H7N1004DS-like datasheet

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