H7N1004LM Datasheet, Switching, Renesas Technology

H7N1004LM Features

• Switching
• Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline LDPAK 4 D 4 4 G 1 S 1 2 3 1 2 2 H7N1004L

PDF File Details

Part number:

H7N1004LM

Manufacturer:

Renesas ↗ Technology

File Size:

137.13kb

Download:

📄 Datasheet

Description:

(h7n1004xx) silicon n-channel mosfet high-speed power switching.

TAGS

H7N1004LM

Renesas Technology

📁 Related Datasheet

H7N1004LD - (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching (Renesas Technology)
.. H7N1004LD, H7N1004LS, H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0072-0600Z (Previous ADE-208-1552E(Z)) .

H7N1004LS - (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching (Renesas Technology)
.. H7N1004LD, H7N1004LS, H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0072-0600Z (Previous ADE-208-1552E(Z)) .

H7N1004AB - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H7N1004AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Features • Low on-resistance RDS (on) =25 mΩ typ.

H7N1004DL - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H7N1004DL, H7N1004DS Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1482-0100 Rev.1.00 Nov 07, 2006 Features • Low on-resistance RDS(on) =.

H7N1004DS - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H7N1004DL, H7N1004DS Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1482-0100 Rev.1.00 Nov 07, 2006 Features • Low on-resistance RDS(on) =.

H7N1004FM - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H7N1004FM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0073-0100Z (Previous ADE-208-1463A(Z)) Rev.1.00 Aug.27.2003 .. F.

H7N1004FN - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H7N1004FN Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1593-0100 Rev.1.00 Oct 23, 2007 Features • Low on-resistance • RDS(on) = 25 mΩ ty.

H7N1002AB - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.2.00 Oct.30.2003 .. Features • Low on-resistance.

H7N1002LD - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H7N1002LD, H7N1002LS, H7N1002LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1131-0700 (Previous: ADE-208-1573E) Rev.7.00 Apr 07, 2006 .

H7N1002LM - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H7N1002LD, H7N1002LS, H7N1002LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1131-0700 (Previous: ADE-208-1573E) Rev.7.00 Apr 07, 2006 .