* Single 5 V supply: 5 V ±10%
* Access time: 85 ns/100 ns (max)
* Power dissipation Active: 20 mW/MHz, (typ) Standby: 110 µW (max)
* On-chip latches: address, data, CE, OE, WE
* Automatic byte write: 10 ms max
* Automatic page write (64 bytes): 10
HN58C257A Datasheet (126.43 KB)
HN58C257A
Hitachi
126.43 KB
256k eeprom (32-kword x 8-bit) ready/busy and res function.
HN58C256A Series HN58C257A Series 256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58C257A) ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Descr.
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