* Single 3 V supply: 2.7 to 5.5 V
* Access time: 120 ns max
* Power dissipation: Active: 20 mW/MHz, (typ) Standby: 110 µW (max)
* On-chip latches: address, data, CE, OE, WE
* Automatic byte write: 10 ms max
* Automatic page write (64 bytes): 10 ms
HN58V256A Datasheet (118.44 KB)
HN58V256A
Hitachi Semiconductor
118.44 KB
256k eeprom (32-kword x 8-bit) ready/busy and res function.
HN58V256A Series HN58V257A Series
256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58V257A)
ADE-203-357D (Z) Rev. 4.0 Oct. 24, 1997 Desc.
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