* Single supply: 2.7 to 5.5 V
* Access time: 100 ns (max) at 2.7 V ≤ VCC < 4.5 V 70 ns (max) at 4.5 V ≤ VCC ≤ 5.5 V
* Power dissipation: Active: 20 mW/MHz (typ) Standby: 110 µW (max)
* On-chip latches: address, data, CE, OE, WE
* Automatic byte write:
HN58V65A Datasheet (127.73 KB)
HN58V65A
Hitachi Semiconductor
127.73 KB
64k eeprom (8-kword x 8-bit) ready/busy function.
HN58V65A Series HN58V66A Series
64 k EEPROM (8-kword × 8-bit) Ready/Busy function, RES function (HN58V66A)
ADE-203-539B (Z) Rev. 2.0 Nov. 1997 Descri.
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