HN58V1001

1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function

Hitachi Semiconductor

HN58V1001 Features

* Single 3 V supply: 2.7 V to 5.5 V

* Access time: 250 ns (max)

* Power dissipation  Active: 20 mW/MHz, (typ)  Standby: 110 µW (max)

* On-chip latches: address, data, CE, OE, WE

* Automatic byte write: 15 ms (max)

* Automatic page write (128 bytes):

HN58V1001 General Description

The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word × 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programmin.

HN58V1001 Datasheet (119.74 KB)

HN58V1001 Datasheet Preview — Preview of HN58V1001 PDF

Datasheet Details

Part number:

HN58V1001

Manufacturer:

Hitachi Semiconductor

File Size:

119.74 KB

Description:

1m eeprom (128-kword x 8-bit) ready/busy and res function.

📁 Related Datasheet

HN58V256A 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (Hitachi Semiconductor)

HN58V257A 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (Hitachi)

HN58V65A 64k EEPROM (8-kword x 8-bit) Ready/Busy function (Hitachi Semiconductor)

HN58V66A 64k EEPROM (8-kword x 8-bit) Ready/Busy function (Hitachi)

HN58064 8192-Word x 8-Bit Electrically EPROM (Hitachi)

HN58C1001 1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function (Hitachi Semiconductor)

HN58C256 EEPROM CMOS (Hitachi)

HN58C256A 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (Hitachi Semiconductor)

HN58C256P-20 CMOS 256K EEPROM (ETC)

HN58C257A 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (Hitachi)

TAGS

HN58V1001 EEPROM 128-kword 8-bit Ready Busy and RES function Hitachi Semiconductor

Image Gallery

HN58V1001 Features

HN58V1001 General Description

Datasheet Details

File Size:

Description:

HN58V1001 Distributor