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2SK3290 - N-Channel MOSFET

2SK3290 Description

2SK3290 Silicon N Channel MOS FET High Speed Switching ADE-208-744 C (Z) 4th.Edition.June 1999 .

2SK3290 Features

* Low on-resistance R DS = 0.455 Ω typ. (VGS = 10 V , ID = 250 mA) R DS = 0.9 Ω typ. (VGS = 4 V , ID = 100 mA)
* 4 V gate drive device.
* Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK3290 Absolute Maximum Ratings (Ta = 25°C) Item Drain to

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Datasheet Details

Part number
2SK3290
Manufacturer
Hitachi Semiconductor
File Size
39.50 KB
Datasheet
2SK3290_HitachiSemiconductor.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Hitachi Semiconductor
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