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K2929 2SK2929

K2929 Description

2SK2929 Silicon N Channel MOS FET High Speed Power Switching ADE-208-552C (Z) 4th.Edition Jun 1998 .

K2929 Features

* Low on-resistance R DS =0.026 Ω typ.
* High speed switching
* 4V gate drive device can be driven from 5V source Outline TO
* 220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2929 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to so

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2SK2929 Hitachi Semiconductor
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