HXY3134CI - N-Channel Enhancement Mode MOSFET

Datasheet Details

The HXY3134CI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 20V ID =0.8A RDS(ON) < 250mΩ@ VGS=4.5V RDS(ON) < 360mΩ@ VGS=2.5V Application Battery protection Load switch Uninterruptible power supply HXY3134CI N-Channel Enhancement Mode MOSFET D S G SOT-523 G! D ! " !" " " ! S N-Channel MOSFET Package Marking and Ordering Information Product ID Pack Marking HXY3134CI SOT-523 34 K Qty(PCS) 3000 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±8.

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