HXY5N10MI - N-Channel Enhancement Mode MOSFET

Datasheet Details

The HXY5N10MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 100V ID = 5A RDS(ON) < 98 mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack HXY5N10MI SOT23-3L Marking 1005 D S G SOT23-3L PIN1 G ! PIN2 D ! " !" " " ! PIN3 S N-Channel MOSFET Qty(PCS) 3000 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM Drain.

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