CS3205B8 Datasheet - Huajing Microelectronics

CS3205B8 Silicon N-Channel Power MOSFET

VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID（Silicon limited current） 120 A VDMOSFETs, is obtained by the self-aligned planar PD(TC=25℃) 230 W Technology which reduce the conduction loss, improve RDS(ON)Typ 7.6 mΩ switching performance and enhance the avalanche energy. The tr.

CS3205B8 Features

* l Fast Switching l Low ON Resistance(Rdson≤8.5mΩ) l Low Gate Charge (Typical Data:74nC) l Low Reverse transfer capacitances(Typical:68pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Sym

CS3205B8 Datasheet (427.95 KB)