Datasheet4U Logo Datasheet4U.com

CS3205B8 Datasheet - Huajing Microelectronics

CS3205B8 - Silicon N-Channel Power MOSFET

VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID(Silicon limited current) 120 A VDMOSFETs, is obtained by the self-aligned planar PD(TC=25℃) 230 W Technology which reduce the conduction loss, improve RDS(ON)Typ 7.6 mΩ switching performance and enhance the avalanche energy.

The tr

CS3205B8 Features

* l Fast Switching l Low ON Resistance(Rdson≤8.5mΩ) l Low Gate Charge (Typical Data:74nC) l Low Reverse transfer capacitances(Typical:68pF) l 100% Single Pulse avalanche energy Test Applications: Automotive、DC Motor Control and Class D Amplifier. Absolute(Tc= 25℃ unless otherwise specified): Sym

CS3205B8-HuajingDiscreteDevices.pdf

Preview of CS3205B8 PDF
CS3205B8 Datasheet Preview Page 2 CS3205B8 Datasheet Preview Page 3

Datasheet Details

Part number:

CS3205B8

Manufacturer:

Huajing Microelectronics

File Size:

427.95 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

📌 All Tags