CS3205B8 Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power MOSFET ○R CS3205 B8 General .
VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID（Silicon limited current） 120 A VDMOSFETs, is obtained by the self-aligned planar PD(TC.

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Datasheet Specifications

Part number: CS3205B8
Manufacturer: Huajing Microelectronics
File Size: 427.95 KB
Datasheet: CS3205B8-HuajingDiscreteDevices.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Sing

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CS3205B8 Silicon N-Channel Power MOSFET Huajing Microelectronics

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