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Silicon N-Channel Power MOSFET
○R
CS3205 B8
General Description：
VDSS
55
V
CS3205 B8, the silicon N-channel Enhanced
ID（Silicon limited current）
120
A
VDMOSFETs, is obtained by the self-aligned planar PD(TC=25℃)
230 W
Technology which reduce the conduction loss, improve RDS(ON)Typ
7.6 mΩ
switching performance and enhance the avalanche
energy. The transistor can be used in various power
switching circuit for system miniaturization and higher
efficiency. The package form is TO-220AB, which
accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤8.
CS3205B8 Datasheet
