Datasheet Details
| Part number | CS75N75B8H | 
|---|---|
| Manufacturer | Huajing Microelectronics | 
| File Size | 843.00 KB | 
| Description | Silicon N-Channel Power MOSFET | 
| Datasheet |  CS75N75B8H-HuajingDiscreteDevices.pdf | 
 
		  | Part number | CS75N75B8H | 
|---|---|
| Manufacturer | Huajing Microelectronics | 
| File Size | 843.00 KB | 
| Description | Silicon N-Channel Power MOSFET | 
| Datasheet |  CS75N75B8H-HuajingDiscreteDevices.pdf | 
CS75N75 B8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 75 100 230 10.2 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220AB, which accords with the RoHS standard.
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