CS75N75B8H Datasheet - Huajing Microelectronics

CS75N75B8H Silicon N-Channel Power MOSFET

CS75N75 B8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 75 100 230 10.2 performance and enhance the avalanche energy. The transistor can be used in various power sw.

CS75N75B8H Features

* l Fast Switching l Low ON Resistance(Rdson≤11.5 mΩ) l Low Gate Charge (Typical Data:71nC) l Low Reverse transfer capacitances(Typical:40pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbo

CS75N75B8H-HuajingDiscreteDevices.pdf