CS730FA9H Datasheet - Huajing Microelectronics

CS730FA9H Silicon N-Channel Power MOSFET

CS730F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and.

CS730FA9H Features

* l Fast Switching l Low ON Resistance(Rdson≤1Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol

CS730FA9H-HuajingDiscreteDevices.pdf