CS730FA9RD - Silicon N-Channel Power MOSFET
CS730F A9RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance VDSS ID PD(TC=25℃) RDS(ON)Typ 400 6 30 0.75 and enhance the avalanche energy.
The transistor can be used in various power swit
CS730FA9RD Features
* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol
