CS730A4RD Datasheet - Huajing Microelectronics

CS730A4RD Silicon N-Channel Power MOSFET

CS730 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and high.

CS730A4RD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 400 V 6A 75 W 0.75 Ω Applications： Power switch circuit of electron ballast and adaptor.

CS730A4RD-HuajingMicroelectronics.pdf