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CS70N06A4

Silicon N-Channel Power MOSFET

CS70N06A4 Features

* l Fast Switching l Low ON Resistance(Rdson≤10 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 60 V 70 A 113 W 7.2 mΩ Absolute（TC= 25℃ unless otherwise specified） Symbol Paramete

CS70N06A4 General Description

CS70N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. T.

CS70N06A4 Datasheet (487.86 KB)

Preview of CS70N06A4 PDF

Datasheet Details

Part number:

CS70N06A4

Manufacturer:

CR Micro

File Size:

487.86 KB

Description:

Silicon n-channel power mosfet.

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CS70N06A4 Silicon N-Channel Power MOSFET CR Micro

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