CS70N30AKR-G Datasheet - CR Micro

CS70N30AKR-G Silicon N-Channel Power MOSFET

VDSS 300 CS70N30 AKR-G, the silicon N-channel Enhanced ID 70 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 250 which reduce the conduction loss, improve switching RDS(ON)Typ 36 performance and enhance the avalanche energy. The transistor can be used in various .

CS70N30AKR-G Features

* l Fast Switching l Low ON Resistance(Rdson≤42mΩ) l Low Gate Charge (Typical Data: 136.2nC) l Low Reverse transfer capacitances(Typical: 107pF) l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of electron ballast and adaptor. Absolute（TJ= 25℃ unless other

CS70N30AKR-G-CRMicro.pdf