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CS7N10AQ2-1 Datasheet - CR Micro

CS7N10AQ2-1 Silicon N-Channel Power MOSFET

CS7N10 AQ2-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ 100 V 7 A 16.8 W 113 mΩ performance and enhance the avalanche energy. This device is suitable for use as a l.

CS7N10AQ2-1 Features

* l Fast Switching l Low ON Resistance(Rdson≤150 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Top View Power switch circuit of adaptor and charger. Absolute（TC= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VG

CS7N10AQ2-1-CRMicro.pdf

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Datasheet Details

Part number:

CS7N10AQ2-1

Manufacturer:

CR Micro

File Size:

478.03 KB

Description:

Silicon n-channel power mosfet.

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