Part number:
CS7N10AQ2-1
Manufacturer:
CR Micro
File Size:
478.03 KB
Description:
Silicon n-channel power mosfet.
CS7N10 AQ2-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ 100 V 7 A 16.8 W 113 mΩ performance and enhance the avalanche energy.
This device is suitable for use as a l
CS7N10AQ2-1 Features
* l Fast Switching l Low ON Resistance(Rdson≤150 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications: Top View Power switch circuit of adaptor and charger. Absolute(TC= 25℃ unless otherwise specified) Symbol Parameter VDSS ID IDMa1 VG
Datasheet Details
CS7N10AQ2-1
CR Micro
478.03 KB
Silicon n-channel power mosfet.
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