CS7N60A8HD

Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS7N60A8HD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter V

CS7N60A8HD General Description

CS7N60 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS7N60A8HD Datasheet (351.79 KB)

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CS7N60A8HD

Manufacturer:

Huajing Microelectronics

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351.79 KB

Description:

Silicon n-channel power mosfet.

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CS7N60A8HD Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS7N60A8HD Features

CS7N60A8HD General Description

Datasheet Details

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