CS7N60FA9HD Datasheet - Huajing Discrete Devices

CS7N60FA9HD Silicon N-Channel Power MOSFET

CS7N60FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS7N60FA9HD Features

* z Fast Switching z ESD Improved Capability z Low Gate Charge (Typical Data:21nC) z Low Reverse transfer capacitances(Typical:15pF) z 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramete

CS7N60FA9HD-HuajingDiscreteDevices.pdf