CS7N60FA9HD - Silicon N-Channel Power MOSFET
CS7N60FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization a
CS7N60FA9HD Features
* z Fast Switching z ESD Improved Capability z Low Gate Charge (Typical Data:21nC) z Low Reverse transfer capacitances(Typical:15pF) z 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramete
