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CS7N60FA9HD Datasheet - Huajing Discrete Devices

CS7N60FA9HD - Silicon N-Channel Power MOSFET

CS7N60FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization a

CS7N60FA9HD Features

* z Fast Switching z ESD Improved Capability z Low Gate Charge (Typical Data:21nC) z Low Reverse transfer capacitances(Typical:15pF) z 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Paramete

CS7N60FA9HD-HuajingDiscreteDevices.pdf

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Datasheet Details

Part number:

CS7N60FA9HD

Manufacturer:

Huajing Discrete Devices

File Size:

658.47 KB

Description:

Silicon n-channel power mosfet.

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