CS7N60FA9HDY Datasheet - Huajing Microelectronics

CS7N60FA9HDY Silicon N-Channel Power MOSFET

CS7N60F A9HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization.

CS7N60FA9HDY Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:25nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter V

CS7N60FA9HDY-HuajingDiscreteDevices.pdf