CS7N60FA9HDY - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS7N60FA9HDY Datasheet Preview — Preview of CS7N60FA9HDY PDF

Datasheet Details

Part number	CS7N60FA9HDY
Manufacturer	Huajing Microelectronics
File Size	625.01 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS7N60FA9HDY-HuajingDiscreteDevices.pdf

CS7N60FA9HDY Product details

Description

CS7N60F A9HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:25nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |