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CS7N65A0D Datasheet - Huajing Microelectronics

CS7N65A0D Silicon N-Channel Power MOSFET

CS7N65 A0D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and high.

CS7N65A0D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:17pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 650 V 7A 100 W 0.98 Ω Applications： Power switch circuit of adaptor and charger. Absolute（Tc

CS7N65A0D-HuajingDiscreteDevices.pdf

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Datasheet Details

Part number:

CS7N65A0D

Manufacturer:

Huajing Microelectronics

File Size:

759.83 KB

Description:

Silicon n-channel power mosfet.

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