CS7N65A0D - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS7N65A0D Datasheet Preview — Preview of CS7N65A0D PDF

Datasheet Details

Part number	CS7N65A0D
Manufacturer	Huajing Microelectronics
File Size	759.83 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS7N65A0D-HuajingDiscreteDevices.pdf

CS7N65A0D Product details

Description

CS7N65 A0D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:17pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 650 V 7A 100 W 0.98 Ω.

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Published: Dec 6, 2016 |