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CS7N65A4TDY

Silicon N-Channel Power MOSFET

CS7N65A4TDY Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter

CS7N65A4TDY General Description

CS7N65 A4TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 7 95 1.1 performance and enhance the avalanche energy. The transistor can be used in various power swit.

CS7N65A4TDY Datasheet (758.83 KB)

Preview of CS7N65A4TDY PDF

Datasheet Details

Part number:

CS7N65A4TDY

Manufacturer:

Huajing Microelectronics

File Size:

758.83 KB

Description:

Silicon n-channel power mosfet.

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