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CS7N03AE-1

Silicon N-Channel Power MOSFET

CS7N03AE-1 Features

* Fast Switching

* Low ON Resistance(Rdson≤20 mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 30 V 7 A 2 W 15 mΩ Absolute（TA= 25℃ unless otherwise specifie

CS7N03AE-1 General Description

CS7N03 AE-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. .

CS7N03AE-1 Datasheet (801.15 KB)

Preview of CS7N03AE-1 PDF

Datasheet Details

Part number:

CS7N03AE-1

Manufacturer:

CR Micro

File Size:

801.15 KB

Description:

Silicon n-channel power mosfet.

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CS7N03AE-1 Silicon N-Channel Power MOSFET CR Micro

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