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CS7N60FA9R

Silicon N-Channel Power MOSFET

CS7N60FA9R Features

* l Fast Switching l Low ON Resistance(Rdson≤1.3Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:5.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Param

CS7N60FA9R General Description

CS7N60F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS7N60FA9R Datasheet (268.82 KB)

Preview of CS7N60FA9R PDF

Datasheet Details

Part number:

CS7N60FA9R

Manufacturer:

Huajing Microelectronics

File Size:

268.82 KB

Description:

Silicon n-channel power mosfet.

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CS7N60FA9R Silicon N-Channel Power MOSFET Huajing Microelectronics

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