CS7N65FA9D

Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS7N65FA9D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:17pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter R

CS7N65FA9D General Description

CS7N65F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 7 40 0.98 performance and enhance the avalanche energy. The transistor can be used in various power swit.

CS7N65FA9D Datasheet (723.72 KB)

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CS7N65FA9D

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Huajing Microelectronics

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723.72 KB

Description:

Silicon n-channel power mosfet.

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CS7N65FA9D Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS7N65FA9D Features

CS7N65FA9D General Description

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