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CS7N65FA9R Datasheet - Huajing Microelectronics

CS7N65FA9R - Silicon N-Channel Power MOSFET

CS7N65F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization a

CS7N65FA9R Features

* l Fast Switching l Low ON Resistance(Rdson≤1.4Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:5.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Param

CS7N65FA9R-HuajingDiscreteDevices.pdf

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Datasheet Details

Part number:

CS7N65FA9R

Manufacturer:

Huajing Microelectronics

File Size:

268.96 KB

Description:

Silicon n-channel power mosfet.

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