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CS7N65A8HD Datasheet - Huajing Microelectronics

CS7N65A8HD - Silicon N-Channel Power MOSFET

CS7N65 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization a

CS7N65A8HD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:17pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter V

CS7N65A8HD-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS7N65A8HD

Manufacturer:

Huajing Microelectronics

File Size:

692.88 KB

Description:

Silicon n-channel power mosfet.

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