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CS730A3RD

Silicon N-Channel Power MOSFET

CS730A3RD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol

CS730A3RD General Description

CS730 A3RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and.

CS730A3RD Datasheet (198.79 KB)

Preview of CS730A3RD PDF

Datasheet Details

Part number:

CS730A3RD

Manufacturer:

Huajing Microelectronics

File Size:

198.79 KB

Description:

Silicon n-channel power mosfet.

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CS730A3RD Silicon N-Channel Power MOSFET Huajing Microelectronics

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