IRFU214BA3HD Datasheet - Huajing Microelectronics

IRFU214BA3HD Silicon N-Channel Power MOSFET

IRFU214B A3HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization.

IRFU214BA3HD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 8.0nC) l Low Reverse transfer capacitances(Typical: 8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Para

IRFU214BA3HD-HuajingMicroelectronics.pdf