IRFU214BA3HD Datasheet, Mosfet, Huajing Microelectronics

IRFU214BA3HD Features

• Mosfet l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 8.0nC) l Low Reverse transfer capacitances(Typical: 8pF) l 100% Single Pulse avalanche energy Test App

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Part number:

IRFU214BA3HD

Manufacturer:

Huajing Microelectronics

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268.89kb

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📄 Datasheet

Description:

Silicon n-channel power mosfet. IRFU214B A3HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the condu

IRFU214BA3HD Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a

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IRFU214BA3HD

Huajing Microelectronics

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