Datasheet4U Logo Datasheet4U.com

IRFU210B - 200V N-Channel MOSFET

IRFU210B Description

IRFR210B / IRFU210B November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFU210B Features

* 2.7A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D-PAK IRFR Series I-PAK G D S IRFU Se

📥 Download Datasheet

Preview of IRFU210B PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFU210 - Power MOSFET (International Rectifier)
  • IRFU210A - Power MOSFET (Samsung)
  • IRFU210PBF - HEXFET POWER MOSFET (International Rectifier)
  • IRFU214 - N-Channel Power MOSFETs (Intersil Corporation)
  • IRFU214A - Power MOSFET (Samsung)
  • IRFU214BA3HD - Silicon N-Channel Power MOSFET (Huajing Microelectronics)
  • IRFU214PBF - Power MOSFET (International Rectifier)
  • IRFU220 - N-Channel Power MOSFETs (Intersil Corporation)

📌 All Tags

200V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFU210B-like datasheet