IRFU210B Datasheet - Fairchild Semiconductor

IRFU210B 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFU210B Features

* 2.7A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

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* G S D-PAK IRFR Series I-PAK G D S IRFU Se

IRFU210B_FairchildSemiconductor.pdf