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IRFU230A - Advanced Power MOSFET

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ. ) IRFR/U230A BVDSS = 200 V RDS(on) = 0.4 Ω ID = 7.5 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ).

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Datasheet Details

Part number IRFU230A
Manufacturer Fairchild Semiconductor
File Size 280.64 KB
Description Advanced Power MOSFET
Datasheet download datasheet IRFU230A Datasheet
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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.) IRFR/U230A BVDSS = 200 V RDS(on) = 0.4 Ω ID = 7.5 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3.
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