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IRFU220B - 200V N-Channel MOSFET

IRFU220B Description

IRFR220B / IRFU220B November 2001 IRFR220B / IRFU220B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFU220B Features

* 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D-PAK IRFR Series I-PAK G D S IRFU Seri

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200V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFU220B-like datasheet