Datasheet4U Logo Datasheet4U.com

IRFU230B

200V N-Channel MOSFET

IRFU230B Features

* 7.5A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D-PAK IRFR Series I-PAK G D S IRFU Seri

IRFU230B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFU230B Datasheet (639.28 KB)

Preview of IRFU230B PDF

Datasheet Details

Part number:

IRFU230B

Manufacturer:

Fairchild Semiconductor

File Size:

639.28 KB

Description:

200v n-channel mosfet.

📁 Related Datasheet

IRFU2307Z AUTOMOTIVE MOSFET (International Rectifier)

IRFU2307Z N-Channel MOSFET (INCHANGE)

IRFU2307ZPbF Power MOSFET (International Rectifier)

IRFU230A Advanced Power MOSFET (Fairchild Semiconductor)

IRFU234A Power MOSFET (Samsung)

IRFU234B 250V N-Channel MOSFET (Fairchild Semiconductor)

IRFU210 Power MOSFET (International Rectifier)

IRFU210 Power MOSFET (Vishay Siliconix)

IRFU210A Power MOSFET (Samsung)

IRFU210B 200V N-Channel MOSFET (Fairchild Semiconductor)

TAGS

IRFU230B 200V N-Channel MOSFET Fairchild Semiconductor

Image Gallery

IRFU230B Datasheet Preview Page 2 IRFU230B Datasheet Preview Page 3

IRFU230B Distributor