IRFU234B - 250V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRFU234B
Manufacturer	Fairchild Semiconductor
File Size	640.93 KB
Description	250V N-Channel MOSFET
Datasheet	IRFU234B_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

6.6A, 250V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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G! G S D-PAK IRFR Series I-PAK G D S IRFU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous.

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Published: Oct 7, 2005 |