Datasheet4U Logo Datasheet4U.com

IRFU234B 250V N-Channel MOSFET

IRFU234B Description

IRFR234B / IRFU234B November 2001 IRFR234B / IRFU234B 250V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFU234B Features

* 6.6A, 250V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G! G S D-PAK IRFR Series I-PAK G D S IRFU Se

📥 Download Datasheet

Preview of IRFU234B PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFU234A - Power MOSFET (Samsung)
  • IRFU2307Z - AUTOMOTIVE MOSFET (International Rectifier)
  • IRFU2307ZPbF - Power MOSFET (International Rectifier)
  • IRFU210 - Power MOSFET (International Rectifier)
  • IRFU210A - Power MOSFET (Samsung)
  • IRFU210PBF - HEXFET POWER MOSFET (International Rectifier)
  • IRFU214 - N-Channel Power MOSFETs (Intersil Corporation)
  • IRFU214A - Power MOSFET (Samsung)

📌 All Tags

Fairchild Semiconductor IRFU234B-like datasheet