IRFU2307ZPbF
International Rectifier
349.45kb
Power mosfet. This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Addition
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lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive.
IRFU2307Z - N-Channel MOSFET
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These N-Channel enhancement mode power field effect transistors are.
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Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.
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.vishay.
IRFR210, IRFU210, SiHFR210, SiHFU210
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VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .
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Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.
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These N-Channel enhancement mode power field effect .
