IRFU214A
Samsung
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Power mosfet.
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IRFU214 - N-Channel Power MOSFETs
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IRFR214, IRFU214
Data Sheet July 1999 File Number
3274.2
2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon .
IRFU214 - Power MOSFET
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D G
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S N-Channel MOSF.
IRFU214 - N-Channel MOSFET
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iscN-Channel MOSFET Transistor
IRFU214
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤2.0Ω @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS =.
IRFU214B - 250V N-Channel MOSFET
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IRFR214B / IRFU214B
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These N-Channel enhancement mode power field effect .
IRFU214BA3HD - Silicon N-Channel Power MOSFET
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Silicon N-Channel Power MOSFET IRFU214B A3HD
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IRFU214B A3HD, the silicon N-channel Enhanced
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IRFU214PBF - Power MOSFET
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PD- 95384A
IRFR214PbF IRFU214PbF
Lead-Free
..
.irf.
1
12/3/04
IRFR/U214PbF
..
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.irf.
IRFR/.
IRFU210 - Power MOSFET
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IRFU210 - Power MOSFET
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PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .
IRFU210A - Power MOSFET
(Samsung)
)($785(6
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