Datasheet4U Logo Datasheet4U.com

IRFU214B

250V N-Channel MOSFET

IRFU214B Features

* 2.2A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D-PAK IRFR Series I-PAK G D S IRFU Ser

IRFU214B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFU214B Datasheet (647.48 KB)

Preview of IRFU214B PDF

Datasheet Details

Part number:

IRFU214B

Manufacturer:

Fairchild Semiconductor

File Size:

647.48 KB

Description:

250v n-channel mosfet.

📁 Related Datasheet

IRFU214 N-Channel Power MOSFETs (Intersil Corporation)

IRFU214 Power MOSFET (International Rectifier)

IRFU214 Power MOSFET (Vishay Siliconix)

IRFU214 N-Channel MOSFET (INCHANGE)

IRFU214A Power MOSFET (Samsung)

IRFU214BA3HD Silicon N-Channel Power MOSFET (Huajing Microelectronics)

IRFU214PBF Power MOSFET (International Rectifier)

IRFU210 Power MOSFET (International Rectifier)

IRFU210 Power MOSFET (Vishay Siliconix)

IRFU210A Power MOSFET (Samsung)

TAGS

IRFU214B 250V N-Channel MOSFET Fairchild Semiconductor

Image Gallery

IRFU214B Datasheet Preview Page 2 IRFU214B Datasheet Preview Page 3

IRFU214B Distributor