IRFU220A Features
* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) IRFR/U220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.6 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2
IRFR220A_FairchildSemiconductor.pdf
Datasheet Details
IRFU220A, IRFR220A
Fairchild Semiconductor
283.93 KB
Advanced power mosfet.
This datasheet PDF includes multiple part numbers: IRFU220A, IRFR220A.
Please refer to the document for exact specifications by model.
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IRFU220A Distributor
