IRFU224A
Samsung
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Power mosfet.
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IRFU224 - Power MOSFET
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PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .
IRFU224 - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
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·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤1.1Ω @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS =.
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These are N-Channel enhancement mode silicon .
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DPAK (TO-252)
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IRFU220 - Power MOSFET
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IRFU220 - N-Channel MOSFET
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iscN-Channel MOSFET Transistor
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·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤0.8Ω @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS =.
IRFU220A - Advanced Power MOSFET
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Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha.
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