IRFU234A
Samsung
754.57kb
Power mosfet.
TAGS
📁 Related Datasheet
IRFU234B - 250V N-Channel MOSFET
(Fairchild Semiconductor)
IRFR234B / IRFU234B
November 2001
IRFR234B / IRFU234B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect .
IRFU2307Z - AUTOMOTIVE MOSFET
(International Rectifier)
PD - 96910
AUTOMOTIVE MOSFET
Features
lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive.
IRFU2307Z - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v.
IRFU2307ZPbF - Power MOSFET
(International Rectifier)
PD - 96191B
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Al.
IRFU230A - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
IRFU230B - 200V N-Channel MOSFET
(Fairchild Semiconductor)
IRFR230B / IRFU230B
IRFR230B / IRFU230B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are.
IRFU210 - Power MOSFET
(International Rectifier)
.
IRFU210 - Power MOSFET
(Vishay Siliconix)
.vishay.
IRFR210, IRFU210, SiHFR210, SiHFU210
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd .
IRFU210A - Power MOSFET
(Samsung)
)($785(6
Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.
IRFU210B - 200V N-Channel MOSFET
(Fairchild Semiconductor)
IRFR210B / IRFU210B
November 2001
IRFR210B / IRFU210B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect .